標題: | Determination of the microstructure of Eu-treated ZnO nanowires by x-ray absorption |
作者: | Huang, W. L. Labis, J. Ray, S. C. Liang, Y. R. Pao, C. W. Tsai, H. M. Du, C. H. Pong, W. F. Chiou, J. W. Tsai, M. -H. Lin, H. J. Lee, J. F. Chou, Y. T. Shen, J. L. Chen, C. W. Chi, G. C. 光電工程學系 Department of Photonics |
關鍵字: | europium;EXAFS;II-VI semiconductors;nanowires;photoluminescence;thermal conductivity;wide band gap semiconductors;XANES;zinc compounds |
公開日期: | 8-Feb-2010 |
摘要: | X-ray absorption near-edge structure (XANES), extended x-ray absorption fine structures (EXAFS), and photoluminescence measurements were used to elucidate the microstructural and photoluminescence properties of ZnO nanowires (ZnO-NWs) that had been treated with Eu by thermal diffusion. The O K- and Eu L(3)-edge XANES and EXAFS spectra at the Zn K- and Eu L(3)-edge verified the formation of Eu(2)O(3)-like layer on the surface of ZnO-NWs. X-ray diffraction, XANES and EXAFS measurements consistently suggest the lack of substitutional doping of Eu ions at the Zn ion sites in the interior of ZnO-NWs. The clear sharp and intense emission bands in the range 610-630 nm of Eu-treated ZnO-NWs originated from the intra-4f transition of Eu ions in the Eu(2)O(3)-like surface layer. |
URI: | http://dx.doi.org/10.1063/1.3304071 http://hdl.handle.net/11536/5847 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3304071 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 96 |
Issue: | 6 |
結束頁: | |
Appears in Collections: | Articles |
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