Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 許相如 | en_US |
dc.contributor.author | Xu, Xiang-Ru | en_US |
dc.contributor.author | 鄭晃忠 | en_US |
dc.contributor.author | Zheng, Huang-Zhong | en_US |
dc.date.accessioned | 2014-12-12T02:12:57Z | - |
dc.date.available | 2014-12-12T02:12:57Z | - |
dc.date.issued | 1993 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#NT824430003 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/58655 | - |
dc.description.abstract | 由於高密度和低功率消耗之記憶體的強烈需求,以薄膜電晶體為負載的CMOS靜態隨 機存取記憶體(SRAM)將佔據大部份的靜態隨機存取記憶體市場。本文探討各種不同 改善薄膜電晶體操作特性的製程方法以期獲取最佳性能。此處發現:純粹快速高溫 回火處理是有潛能取代長時間爐管回火做為非晶矽再結晶時的處理方法,而有助於 提升產能及降低製作成本。同時,由變壓耦合電漿(TCP) 產生的氫氣電漿可以更有 效地填補存在晶粒間的載子捕捉中心。整合這些製程條件,配合汲極補償(offset) 結構,即可容易地以合乎經濟效益的方式生產具有高開啟╱關閉電流比的薄膜電晶 體,應用於高密度靜態隨機存取記憶體元件中。 | zh_TW |
dc.language.iso | en_US | en_US |
dc.subject | 靜態 | zh_TW |
dc.subject | 記億體 | zh_TW |
dc.subject | 研究 | zh_TW |
dc.subject | 電子工程 | zh_TW |
dc.subject | 快速高溫回火 | zh_TW |
dc.subject | 再結晶 | zh_TW |
dc.subject | 變壓耦合電漿 | zh_TW |
dc.subject | 氫化 | zh_TW |
dc.subject | 汲極補償結構. | zh_TW |
dc.subject | ELECTRONIC-ENGINEERING | en_US |
dc.subject | RTA | en_US |
dc.subject | Recrystallization | en_US |
dc.subject | TCP | en_US |
dc.subject | Hydrogenation | en_US |
dc.subject | Offset-Drain Structure. | en_US |
dc.title | 靜態隨機存取記憶體之薄膜電晶體技術之研究 | zh_TW |
dc.title | Study of the technology of thin film transistors for SRAM's | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電子研究所 | zh_TW |
Appears in Collections: | Thesis |