標題: Investigation of Electrostatic Integrity for Ultra-Thin-Body GeOI MOSFET Using Analytical Solution of Poisson's Equation
作者: Hu, Vita Pi-Ho
Wu, Yu-Sheng
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: The electrostatic integrity for UTB GeOI MOSFET is examined comprehensively by using analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices are also examined.
URI: http://hdl.handle.net/11536/586
ISBN: 978-1-4244-2539-6
期刊: EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS
起始頁: 210
結束頁: 213
Appears in Collections:Conferences Paper