用一種新的電漿處理技術製作超薄氧化層

Abstract

在這個研究中, 我們發展一種新的電漿處理技術用來製作超薄氧化層. 它 包含兩個電漿處理步驟, 隨後的退火處理(視需要而作), 再覆蓋上導電 層, 再開出導電層的輪廓. 我們發現剛經過電漿處理步驟得到的超薄氧化 層電性甚差且含有大量缺陷, 但這樣的氧化層加以在氮氣中退火處理後, 特性能修復至與未經電漿處理過的控制樣本幾乎一樣好. 又 , 電子槍蒸 鍍做導電金屬層比用熱阻蒸鍍所做出的樣本電性差. 我們技術的原理與四 氟化碳/ 氧氣 電漿瓦數和快速昇降溫退火處理中高溫區的時間長短對樣 本電性的影響在文中亦有提及. With the scalling down of MOS devices into the deep submicrom region ,ultrathin dielectric with high qualities becomes more and more indispensable. In this work ,we have been developed a new plasma modificationtechnology to form ultrathin SiO2 , which include two plasma processing steps then annealing and then coating and patterning contact material . We find that after the plasma processings ,the oxides are electrically very weak and heavily damaged , but annealing in N2 can repair it to almost as good as control sample . Samples evaporating contact metal by E-Gun are electrically worse than by thermoevaporator. Principles of plasma modification , effects on the oxide electrical qualities of CF4 plasma power and RTA annealing time are also briefly investigated .