| 標題: | 氧氣電漿灰化技術在光阻減薄技術應用上的特性研究及均勻度控制 Characterization and Uniformity Control of Resist Thinning Using Plasma Ashing Technology |
| 作者: | 郭俊伊 Kuo, Chun Yi 馮明憲 Ming Shiann Feng 材料科學與工程學系 |
| 關鍵字: | 電漿灰化;光阻減薄;非均向性比值;巨觀負載效應;均勻度偏移;Plasma ashing;Resist thinning;Anisotropic ratio;Macroloading effect;Unifromity deviation |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT850159034 http://hdl.handle.net/11536/61611 |
| Appears in Collections: | Thesis |
- A new simulation model for plasma ashing process-induced oxide degradation in MOSFET / You, KF;Chang, MC;Wu, CY
- The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing / Chien, CH;Chang, CY;Lin, HC;Chiou, SG;Huang, TY
- The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing / Chien, CH;Chang, CY;Lin, HC;Chiou, SG;Huang, TY
- Resist-related damage on ultrathin gate oxide during plasma ashing / Chien, CH;Chang, CY;Lin, HC;Chang, TF;Chiou, SG
- 電漿製程天線效應對超薄閘氧化層電晶體特性影響之研究 / 林鴻志;HORNG-CHIHLIN
- The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides / Chien, CH;Chang, CY;Lin, HC;Chang, TF;Hsien, SK
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