| 標題: | 次微米N型MOS元件中反向短通道效應之模式及其特性分析 = Modeling and characterization of the reverse short channel effect in submicron n-MOSFET's |
| 作者: | 鄭水明 莊紹勳 電子研究所 |
| 公開日期: | 1996 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT856430121 http://hdl.handle.net/11536/62556 |
| Appears in Collections: | Thesis |
- 次微米MOS元件中反向短通道效應特性分析與模式 / 莊紹勳;Chung Steve S
- 逆向短通道效應之研究 / 黃調元;TIAO-YUANHUANG
- 具有反向短通道效應N型MOS元件性能及可靠性的研究 / 莊紹勳;Chung Steve S
- 次微米n-通道金氧半場效電晶體之模擬和分析 / 楊士賢;Yang, Shih-Hsien;吳慶源;Wu Ching-Yaun
- Direct observation of the lateral nonuniform channel doping profile in submicron MOSFET's from an anomalous charge pumping measurement results / Chung, SS;Cheng, SM;Lee, GH;Guo, JC
- TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET / GUO, JC;CHANG, MC;LU, CY;HSU, CCH;CHUNG, SSS
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