標題: The Dependence of the Performance of Strained NMOSFETs on Channel Width
作者: Yeh, Lingyen
Liao, Ming Han
Chen, Chun Heng
Wu, Jun
Lee, Joseph Ya-Min
Liu, Chee Wee
Lee, T. L.
Liang, M. S.
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Contact etch stop layer (CESL);high-stress silicon nitride;MOSFET;strained silicon
公開日期: 1-十一月-2009
摘要: The dependence of the performance of strained NMOSFETs on channel width was investigated. When the channel width was varied, the stress in the channel varied accordingly. This changed the electron effective mass and, consequently, the ON-state current I(on). By shrinking the channel width of a strained NMOSFET from 1 to 0.1 mu m and by keeping the channel length at 55 nm, the ON-state drain current per unit channel width was enhanced by 22%. The gate leakage current was also affected by the stress in the channel, which can be explained by the increase in hole barrier height at the Si/SiO(2) interface. Furthermore, when the film stress was increased by 1 GPa, the gate leakage current density J(g) of a strained NMOSFET with a channel width of 0.1 mu m and a length of 55 nm under a negative bias -3 V was reduced by 63%.
URI: http://dx.doi.org/10.1109/TED.2009.2030542
http://hdl.handle.net/11536/6472
ISSN: 0018-9383
DOI: 10.1109/TED.2009.2030542
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 56
Issue: 11
起始頁: 2848
結束頁: 2852
顯示於類別:期刊論文


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