标题: | 高敏感度之矽锗奈米生医感测之研究与应用 The Investigation and Application of High Sensitivity SiGe Nanowire for Bio-sensor |
作者: | 郭俊铭 Jiun-Ming Kuo 张国明 Kow-Ming Chang 电子研究所 |
关键字: | 奈米线 矽锗 高敏感 生医感测;Nanowire, SiGe, High Sensitivity, Bio-Sensor |
公开日期: | 2007 |
摘要: | 在这篇论文中我们探讨矽锗奈米线的感测能力之优缺点,并针对氧化过后之矽锗薄膜做研究,紧接着将此结果应用于矽锗奈米线并作感测能力之探论。 首先,先探讨着矽锗奈米线与传统的多晶矽奈米线差异,矽锗奈米线拥有优于传统多晶矽奈米线较高的导通电流,但也拥有着较高的接触电阻。 接着,我们利用传统的薄膜电晶体元件做为我们测试结构,探讨着不统的氧化条件下所造成的电流增益情况。越高的温度及越长的时间氧化,都会造成其电流增益。此外,我们尝试着在不同的氧化温度与时间的条件已达到相同的氧化厚度,其电流增益也相同,此结果为相同的氧化厚度所导致的锗析出也是一样的。 其次,我们探讨着不同的矽锗浓度的奈米线的蛋白质感测。越高的锗浓度拥有较高的感测能力,但是太高的锗浓度其感测能力却下降,我们推测是因为表面拥有过多的缺陷所导致。 再者,我们探讨着矽锗奈米线氧化厚的感测能力,在低浓度时,其感测能力随着氧化温度升高而提高,但是随着浓度的提高其感测能力可能会因为过高的氧化温度而下降,其原因可能为氧化温度或时间过久使的锗浓度超过一定值时会造表面缺陷上升。 最后,除了从材料或表面处理外,我们提出了一个新颖的结构来提升其奈米线的敏感度,利用双层的高导通与低导通电特性,来有效的决定电流的路径,如此在相同的电场变化下可拥有着较高的影响力,已得到较高的感测能力。 In this thesis, we concentrate our efforts on the advantage and disadvantage of SiGe nanowire and Poly-Si nanowire for bio-sensor. The behavior of oxidation for SiGe film was studied in the follows. The application of the SiGe oxidation was used to enhance the sensitivity in the end of thesis. First, we demonstrated the electric properties of SiGe and Poly-Si nanowires. The higher drive current is obtained for SiGe nanowire, but the disadvantage of the higher contact resistance appeared for SiGe nanowire. Secondly, the thin-film-transistor (TFT) was used to understand the increase of drive current after different oxidation conditions. The higher drive current obtained for the higher temperature, oxidation time and oxygen flow. Besides, the same oxide thicknesses were achieved by controlling the different oxidation time and temperature. The same drive current improves for the same oxide thickness. The reason come form the same Ge condensed after oxidation. Third, we studied the sensitivity of SiGe nanowire with different Ge concentration. The higher sensitivity was observed for the SiGe nanowire with high Ge concentration. However, the sensitivity decreased for the over-high Ge concentration. The reason may be that the higher defect appears on the surface. Finally, we used the Ge condensation technique on the SiGe nanowire for bio-sensor. The sensitivity improved for the SiGe nanowire with low Ge concentration after high temperature oxidation. However, the sensitivity decreased for SiGe nanowire with higher Ge concentration. It may be that the higher defect appears on the surface. In the end of the thesis, we introduce a novel structure to improvement the sensitivity. A double layer with high/low drive current is combined to achieve this point. The sensitivity improves under the same electric filed change by controlling the current through. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009211808 http://hdl.handle.net/11536/67812 |
显示于类别: | Thesis |
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