薄膜體聲波共振腔分析與高頻開關設計

Abstract

本論文前半部分，藉由分析薄膜體聲波共振腔的架構，萃取出其等效模型，並利用電路模擬軟體，模擬共振腔等效電路的特性。另外，簡單介紹如何使用薄膜體聲波濾波器的共振頻率點，或是外加電感，以設計濾波器。最後，分析實作的共振腔特性，介紹萃取等效電路參數值的方法，及分析製程所造成的誤差。

本論文後半部分介紹了開關設計的基本原理及架構，並利用並聯型的架構，以PHEMT為電晶體，砷化鎵為基板，設計頻率工作在60GHz與77GHz的單刀雙擲開關。

In the first half of this thesis, we extract the equivalent circuit of thin film bulk acoustic wave resonator (FBAR) by analyzing its physical structure. Then, simulate the characteristic of the equivalent circuit by simulation tools. Besides, introduce how to use the resonance frequency of FBAR, or add external inductor to design filter. Finally, analyze the measurement result of FBAR, describe how to make the equivalent circuit fit the measured curves, and find the errors caused by the process.

In the second half of the thesis, the basic theory and structure of switch are described. The 60GHz and 77GHz single-pole double-throw switches are designed in shunt configuration with PHEMT on GaAs substrate.