V型溝槽的製作與光纖構裝

Abstract

本論文運用非等向蝕刻技術製程（anisotropic etching process），發展解析度為0.00625°的晶向對準(Crystal Orientation Alignment)技術，製作矽V型溝槽(V-grooves)，以供光纖定位之使用，進而與光纖膠合(curing)組裝成光纖陣列(fiber array)，期在光電元件構裝上，提升其效率。在實驗中，並對蝕刻後矽晶片(Silicon wafer)表面粗糙度(roughness)之改善提出最適化條件。

This experiment applies anisotropic etching process to develop crystal orientation alignment techniques with resolution as to 0.00625 degree to produce V-grooves for the need in application of fiber-positioning, hence, combined with fiber curing to produce fiber array to advance the efficiency of optical-electrical device structure. This experiment also provides the most suitable condition for smoothing roughness of silicon wafer.