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dc.contributor.authorCheng, Chih-Changen_US
dc.contributor.authorLin, J. F.en_US
dc.contributor.authorWang, Tahuien_US
dc.contributor.authorHsieh, T. H.en_US
dc.contributor.authorTzeng, J. T.en_US
dc.contributor.authorJong, Y. C.en_US
dc.contributor.authorLiou, R. S.en_US
dc.contributor.authorPan, Samuel C.en_US
dc.contributor.authorHsu, S. L.en_US
dc.date.accessioned2014-12-08T15:09:25Z-
dc.date.available2014-12-08T15:09:25Z-
dc.date.issued2007en_US
dc.identifier.isbn978-1-4244-1507-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/7190-
dc.identifier.urihttp://dx.doi.org/10.1109/IEDM.2007.4419090en_US
dc.description.abstractSelf-heating induced transient hot carrier effects in high-voltage n-LDMOS are investigated. A novel LDMOS structure incorporating a metal contact in the bird's beak region is fabricated, which allows us to probe an internal voltage transient in hot carrier stress. The AC stress-frequency dependence of device degradation is characterized and evaluated by a two-dimensional numerical simulation. Our result shows that drain current degradation in AC stress is more serious than in DC stress because of the reduction. of self-heating effect.en_US
dc.language.isoen_USen_US
dc.titleImpact of self-heating effect on hot carrier degradation in high-voltage LDMOSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/IEDM.2007.4419090en_US
dc.identifier.journal2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2en_US
dc.citation.spage881en_US
dc.citation.epage884en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259347800202-
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