應用於Ku-band之低功率主動式降頻混頻器

Abstract

本論文旨在探討低功率、高增益之主動式混頻器的設計，頻段定位於Ku-band (12-18 GHz)。設計內容包含以下幾個部分:1.混頻器主電路架構選定。2.輸入、輸出阻抗匹配。3.RF-LO級間寄生電容的處理、選取適當偏壓。4.晶片佈局走線的配置及其電感、電容之寄生效應。 電路設計頻率為:射頻輸入頻率17 GHz、中頻輸出頻率10 MHz、本地訊號頻率17.01 GHz。量測結果:電壓轉換增益8.43 dB；P1dB在-25 dBm；RF-IF、LO-IF、LO-RF之隔離度皆大於30 dB；並達成功率消耗僅1.21 mW的設計目標。 本晶片使用台積電90 nm CMOS製程實現，並且在國家晶片中心進行量測。

This thesis presents a low-power and low-voltage down-conversion mixer. The proposed mixer was implemented in a standard 90 nm 1P9M CMOS technology. The low-power characteristic is achieved by using the current-reused topology and the lateral current commutation design. The conversion gain is 8.43 dB at RF frequency 17 GHz, and the IF frequency is 10MHz. The LO-RF, LO-IF and RF-IF isolations are better than 30 dB. These performances are measured under a low supply voltage of 1.1 V, while the power consumption of this mixer is only 1.21mW.