用主動帶通濾波器做頻道選擇的直接降頻接收機和射頻元件的特性分析

Abstract

本篇論文針對現今無線網路通訊的應用，利用台積電CMOS 0.18um的製程所設計的射頻積體電路。主要分成兩大部份：第一部份為主動帶通濾波器及其應用於5GHz通道選擇接收機的設計與分析。第二部份是蕭特基二極體與兩種雙載子電晶體─矽鍺製程和CMOS垂直寄生BJT的元件量測。 論文第二章首先會對高旁帶截止帶通濾波器的設計和其Q值增強技術作探討，並探討差動電路混合S參數與其雜訊校正。第三章則實作含有主動濾波器的5GHz通道選擇接收機。第四章則針對高頻電路關鍵元件─蕭特基二極體，量測不同光罩組合的二極體與其反對稱對的組合，最後量測SiGe 0.18um與CMOS寄生V-npn等兩種雙載子電晶體的大信號特性。

This thesis focuses on the application of wireless communication network, using the TSMC 0.18um CMOS process designs to achieve the RF circuits. It is divided into two parts. The first part is active filter and its application to 5GHz channel select receiver. The second part is the characteristic measurement of RF device. The RF components contain Schottky diode and two kinds of bipolar transistors─SiGe HBT and CMOS Vertical-npn BJT. In the chapter 2, we discuss the design method of high sideband rejection bandpass filter and the technique of Q-enhancement. Then, we discuss mixed-mode S parameter and noise calibration related to differential I/O circuit. In the chapter 3, we implement the 5GHz direct conversion receiver using tunable active filter for channel select. In the chapter 4, we focus on the key components of RF circuits─Schottky diode. We implement and measure the diode testkey and the combination of different mask forms anti-parallel diode pair. Finally, we measure the DC characteristics of SiGe 0.18um HBT and CMOS parasitic Vertical-npn.