1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Wen-Yien_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2014-12-08T15:09:42Z-
dc.date.available2014-12-08T15:09:42Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2013368en_US
dc.identifier.urihttp://hdl.handle.net/11536/7419-
dc.description.abstractElectrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly Increased in this letter through the waffle-layout style with body-current Injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-mu m 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (I(t2)) of nLDMOS has a more than 2x increase by the body-current injection.en_US
dc.language.isoen_USen_US
dc.subjectBipolar CMOS DMOS (BCD) processen_US
dc.subjectbody-current injectionen_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectlateral DMOS (LDMOS)en_US
dc.titleHigh-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protectionen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2013368en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue4en_US
dc.citation.spage389en_US
dc.citation.epage391en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000264629100026-
dc.citation.woscount4-
Appears in Collections:Articles


Files in This Item:

  1. 000264629100026.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...