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dc.contributor.authorChien, CHen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorChang, TFen_US
dc.contributor.authorChiou, SGen_US
dc.contributor.authorChen, LPen_US
dc.contributor.authorHuang, TYen_US
dc.date.accessioned2014-12-08T15:02:02Z-
dc.date.available2014-12-08T15:02:02Z-
dc.date.issued1997-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.553034en_US
dc.identifier.urihttp://hdl.handle.net/11536/753-
dc.description.abstractThis paper presents an important observation of plasma-induced damage on ultrathin oxides during O-2 plasma ashing by metal ''antenna'' structures with photoresist on top of the electrodes, It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 10(4), In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging, This phenomenon is contrary to most previous reports, It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.en_US
dc.language.isoen_USen_US
dc.titleResist-related damage on ultrathin gate oxide during plasma ashingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.553034en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume18en_US
dc.citation.issue2en_US
dc.citation.spage33en_US
dc.citation.epage35en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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