標題: Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor
作者: Hsu, Hsing-Hui
Lin, Horng-Chih
Chan, Leng
Huang, Tiao-Yuan
電子工程學系及電子研究所
奈米中心
Department of Electronics Engineering and Institute of Electronics
Nano Facility Center
關鍵字: Double gate;fluctuation;nanowire (NW);polycrystalline silicon (poly-Si)
公開日期: 1-Mar-2009
摘要: In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation.
URI: http://dx.doi.org/10.1109/LED.2008.2011568
http://hdl.handle.net/11536/7555
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2011568
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 3
起始頁: 243
結束頁: 245
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