標題: | Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor |
作者: | Hsu, Hsing-Hui Lin, Horng-Chih Chan, Leng Huang, Tiao-Yuan 電子工程學系及電子研究所 奈米中心 Department of Electronics Engineering and Institute of Electronics Nano Facility Center |
關鍵字: | Double gate;fluctuation;nanowire (NW);polycrystalline silicon (poly-Si) |
公開日期: | 1-Mar-2009 |
摘要: | In this letter, the fluctuation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) with independently controlled double-gate configuration were studied. The defects existing in the NW channels are identified as one of the major sources for the fluctuation. The passivation of these defects by plasma treatment is shown to be effective for reducing the fluctuation. We have also found that the fluctuation is closely related to the operation modes. When only one of the gates is employed as the driving gate to control the switching behavior of the device, an optimum bias for the other gate can be found for minimizing the fluctuation. |
URI: | http://dx.doi.org/10.1109/LED.2008.2011568 http://hdl.handle.net/11536/7555 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2008.2011568 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 3 |
起始頁: | 243 |
結束頁: | 245 |
Appears in Collections: | Articles |
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