标题: | 低温多晶矽面板之静电保护电路探讨及提升其防护效能 Investigation on the Improvement of ESD Protection Circuits for Low Temperature Polycrystalline Silicon Thin Film Transistor Panels |
作者: | 王有谅 刘柏村 平面显示技术硕士学位学程 |
关键字: | 低温多晶矽;静电保护电路;LTPS;ESD protection circuit |
公开日期: | 2014 |
摘要: | 在这资讯发达时代,液晶显示器(LCD)除了因应查阅资讯及处理文件等目的提升解析度之外,也需兼顾省电和使用安全上的设计;高解析度LCD衍生出面板内部金属走线变窄及操作电路变复杂等状况,不仅得面板操作耗电流增加,也提高LCD内部电路在生产制程中遭受静电危害的机率。 迄今,广泛被LCD业界使用的MOS-Diode 静电保护电路,因其直接与面板Power line 电路连接,所以即使在没动作状态时也为一漏电流途径,而其经ESD stress后,又有着高漏电流和特性变异的隐忧,影响着后续制程的生产良率,更甚危害到LCD产品运用在车载及航太上的使用安全。 本论文基于LTPS制程所特有NMOS、PMOS 特性及PIN-Diode 的高导通电流现象,探讨PIN-Diode、Single MOS-diode、Multi MOS-diode 三种静电保护电路,预期研究出较佳的静电保护电路设计;实验结果指出静电保护电路漏电流表现在ESD stress 之前,PIN-Diode静电保护电路为最佳,但在ESD stress 后,则是Multi MOS-Diode 静电保护电路为最佳;而在静电保护能力方面,以PIN-Diode 静电保护电路为最佳,Single MOS-Diode为次之,Multi MOS-Diode则是最差;三种静电保护电路设计都有其优缺点,这些实验数据可作为日后LCD面板在静电保护电路设计上的参考依据。 In the information developed time, LCD in addition to enhance the resolution to cope with the purposes of access information and documents processing, but also need to take into account the design of energy saving and the use of safety; High-resolution LCD panel resulted in the internal metal traces and the circuit operation becomes narrower and complex, not only panel current consumption increased, but also increase the probability of LCD internal circuit electrostatic hazards from the production process. Up to today, MOS-Diode ESD protection circuit used in the LCD industry widely, Because of its connect directly to the panel Power line circuit, therefore even it is not in the operating mode, it still to be a pathway of leakage current, and its through ESD stress, but also has a high leakage currents and characteristics variation worries, affecting subsequent production processes yield rate , even more endanger to the safety of LCD products what used in the automotive and aerospace. Based on the particular NMOS and PMOS character of LTPS process and the higher turn-on current of PIN diode, this paper was researched the PIN diode , the Single MOS-diode ,and the Multi MOS-diode of ESD protection circuit for finding out the best one of them. According to experimental result for comparing the leakage current condition of ESD protection circuit, the PIN diode circuit would be the lowest of them before ESD stress , but the Multi MOS-diode circuit would be the lowest after ESD stress. And for the ability of ESD protection, the PIN-diode circuit would be the best one, the second was the Single MOS-diode circuit, and the Multi MOS-diode was the worst. The three types of ESD protection circuit have advantage and weakness respectively, our experimental data can be referred in ESD protection of LCD panel future. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070061615 http://hdl.handle.net/11536/76537 |
显示于类别: | Thesis |