電子束微影技術的鄰近效應研究

Abstract

本論文研製之電子束微影技術的鄰近效應研究,包含鄰近效應參數及鄰近效應修正。我們開發一個以蒙地卡羅為基礎的模擬程式,用來計算鄰近效應參數,另外從我們所設計的圖案,鄰近效應參數也可由實驗量測資料以雙高斯函數模型粹取出來。以這些鄰近效應參數及設計圖案,我們使用一鄰近效應修正軟體,PROXECCO,來產出鄰近效應修正圖案檔。之後從實驗量測數據,我們展示出重大的鄰近效應修正成果。我們使用可變形狀電子束曝光系統「Leica WePrint 200」,可以成功曝出小於100奈米的奈米級的圖案。

In this thesis, proximity effect of E-beam lithography was investigated, including proximity effect parameters and proximity effect correction. An E-beam simulation program based on Monte Carlo method was developed to obtain proximity effect parameters. Besides, the proximity parameters were extracted from experiment data of our designed patterns with the double Gaussian functions model. With these proximity effect parameters and our designed patterns, corrected E-beam exposure files were generated by the proximity correction software, PROXECCO. Using the corrected files, proximity effect was demonstrated to be corrected significantly from the experiment results. Sub 100 nm patterns were printed successfully by using the proximity effect correction method at variable shape E-beam exposure tool, Leica WePrint 200.