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dc.contributor.author梁書旗en_US
dc.contributor.authorShu-chi Liangen_US
dc.contributor.author溫瓌岸en_US
dc.contributor.author溫文燊en_US
dc.contributor.authorKuei-Ann Wenen_US
dc.contributor.authorWen-Shen Wuenen_US
dc.date.accessioned2014-12-12T03:03:03Z-
dc.date.available2014-12-12T03:03:03Z-
dc.date.issued2006en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009411676en_US
dc.identifier.urihttp://hdl.handle.net/11536/80590-
dc.description.abstract本論文主要討論設計一應用於WiMAX之雙增益模式射頻低雜訊放大器。雙增益模式之設計可提高電路的動態操作範圍。兩模式只需用同一套輸入端匹配電路。多閘極電晶體技術加入此電路中以提高線性度。本電路以0.13微米CMOS製程製作,操作頻率範圍為2.3至2.7GHz。此電路建立了行為模型,並藉此行為模型來幫助縮短電路設計週期。zh_TW
dc.description.abstractIn this thesis, a dual-gain mode design of a direct-conversion CMOS RF LNA for IEEE 802.16e (WiMAX) applications is presented. Two gain modes with one switch stage are designed in the purposed LNA to enlarge the dynamic range. It needs only one common input matching network for different gain modes. Multiple Gated Transistors topology is integrated for linearity enhancement. The circuit is fabricated in 0.13□m CMOS process, and it is designed for operation frequency of 2.3 to 2.7 GHz. A behavior model of the circuit is constructed to facilitate the design cycle.en_US
dc.language.isozh_TWen_US
dc.subject雙增益模式zh_TW
dc.subject低雜訊放大器zh_TW
dc.subject多閘極電晶體方法zh_TW
dc.subject行為模型zh_TW
dc.subject互補金氧半導體zh_TW
dc.subjectDual gain modeen_US
dc.subjectLNAen_US
dc.subjectMGTR topologyen_US
dc.subjectBehavior modelen_US
dc.subjectCMOSen_US
dc.subjectWiMAXen_US
dc.title應用於WiMAX之雙增益模式互補金氧半低雜訊放大器設計zh_TW
dc.titleDesign of Dual Gain Mode CMOS LNA for WiMAX Applicationsen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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