Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties

Abstract

Vertically well-aligned single crystal Ni(31)Si(12) nanowire (NW) arrays were epitaxially grown on Ni(31)Si(12) films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni(31)Si(12) NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni(31)Si(12) NWs were measured to be 51 mu Omega cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni(31)Si(12) NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. (C) 2008 American Institute of Physics.