標題: | Vertically well-aligned epitaxial Ni(31)Si(12) nanowire arrays with excellent field emission properties |
作者: | Lee, Chung-Yang Lu, Ming-Pei Liao, Kao-Feng Wu, Wen-Wei Chen, Lih-Juann 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 15-九月-2008 |
摘要: | Vertically well-aligned single crystal Ni(31)Si(12) nanowire (NW) arrays were epitaxially grown on Ni(31)Si(12) films preferentially formed on Ni foil substrates with a simple vapor phase deposition method in one step. The Ni(31)Si(12) NWs are several micrometers in length and 50-80 nm in diameter. The resistivities of the Ni(31)Si(12) NWs were measured to be 51 mu Omega cm by four-terminal electrical measurement. The NWs can carry very high currents and possess excellent field emission properties. The growth of vertically well-aligned Ni(31)Si(12) NW arrays shall lead to significant advantages in the fabrication of vertical Si nanodevices. (C) 2008 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2981703 http://hdl.handle.net/11536/8347 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2981703 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 93 |
Issue: | 11 |
結束頁: | |
顯示於類別: | 期刊論文 |