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dc.contributor.authorChen, William Po-Nienen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorGoto, Ken-Ichien_US
dc.date.accessioned2014-12-08T15:10:57Z-
dc.date.available2014-12-08T15:10:57Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn1536-125Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/TNANO.2008.2004771en_US
dc.identifier.urihttp://hdl.handle.net/11536/8381-
dc.description.abstractThis paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.en_US
dc.language.isoen_USen_US
dc.subjectCoulomb mobilityen_US
dc.subjectMOSFETen_US
dc.subjectstrained siliconen_US
dc.titleInvestigation of Coulomb Mobility in Nanoscale Strained PMOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TNANO.2008.2004771en_US
dc.identifier.journalIEEE TRANSACTIONS ON NANOTECHNOLOGYen_US
dc.citation.volume7en_US
dc.citation.issue5en_US
dc.citation.spage538en_US
dc.citation.epage543en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000260463300003-
dc.citation.woscount7-
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