標題: Investigation of Coulomb Mobility in Nanoscale Strained PMOSFETs
作者: Chen, William Po-Nien
Su, Pin
Goto, Ken-Ichi
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Coulomb mobility;MOSFET;strained silicon
公開日期: 1-Sep-2008
摘要: This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel pMOSFETs. Our extracted Coulomb mobility shows very weak stress dependency at room temperature. This finding has also been verified in both long- and short-channel devices by the four-point wafer bending measurement. Therefore, in order to maximize the process-induced strain efficiency on nanoscale pMOSFETs, lower surface impurity concentration is suggested to avoid the Coulomb mobility domination in carrier transport.
URI: http://dx.doi.org/10.1109/TNANO.2008.2004771
http://hdl.handle.net/11536/8381
ISSN: 1536-125X
DOI: 10.1109/TNANO.2008.2004771
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 7
Issue: 5
起始頁: 538
結束頁: 543
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