标题: | The influence of precleaning process on the gate oxide film fabricated by electron cyclotron resonance plasma oxidation |
作者: | Chang, KM Li, CH Fahn, FJ Tsai, JY Yeh, TH Wang, SW Yang, JY 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
公开日期: | 1-一月-1997 |
摘要: | The influence of the precleaning process on the characteristics of SiO2 film grown by using electron cyclotron resonance (ECR) plasma oxidation at room temperature is presented in this work. We find that the growth rate, electrical properties, and reliability of the ECR plasma grown oxide is improved by this precleaning step. Two growth mechanisms are found which determine the electrical properties of the plasma grown oxide. The plasma damage is also discussed. We find that plasma oxidation produces little plasma damage in our experiments. Excellent ECR plasma grown silicon dioxide with good electrical properties and reliability characteristics are obtained by this precleaning technique. |
URI: | http://hdl.handle.net/11536/856 |
ISSN: | 0013-4651 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 144 |
Issue: | 1 |
起始页: | 311 |
结束页: | 314 |
显示于类别: | Articles |
文件中的档案:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.