標題: Impacts of nitric acid oxidation on low-temperature polycrystalline silicon TFTs with high-k gate dielectric
作者: Yang, Tsung-Yu
Ma, Ming-Wen
Kao, Kuo-Hsing
Su, Chun-Jung
Chao, Tien-Sheng
Lei, Tan-Fu
電子物理學系
Department of Electrophysics
關鍵字: high-k gate dielectric;HfO2;nitric acid oxidation;thin-film transistors (TFTs)
公開日期: 2007
摘要: In this paper, low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFrs) with HfO2 gate dielectric and nitric acid oxidation pre-treatment is investigated. Significant improvement on on/off current ratio and field effect mobility is observed due to the nitric acid oxidation pre-treatment. An excellent on/off current ratio and subthreshold swing, as well as low threshold voltage and I-off can be achieved without any other hydrogen passivation treatments. These improved performances can be attributed to both the high gate capacitance density using high-k gate dielectric and the good interface quality by nitric acid oxidation of poly-silicon.
URI: http://hdl.handle.net/11536/8867
ISBN: 978-7-5617-5228-9
期刊: AD'07: Proceedings of Asia Display 2007, Vols 1 and 2
起始頁: 519
結束頁: 522
Appears in Collections:Conferences Paper