深次微米T型閘極金氧半電晶體之改良研製及其效應之研究

標題:	深次微米T型閘極金氧半電晶體之改良研製及其效應之研究 Fabrication and Characterization of Deep-Submicron MOSFET with T-Gate Structure Using a Refined Process with Nitride/TEOS Stack Spacer
作者:	黃調元 TIAO-YUANHUANG 交通大學電子工程系
關鍵字:	閘極漏電流;前非晶化佈植;Gate leakage current;Preamorphization implant
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-037
URI:	http://hdl.handle.net/11536/88700 https://www.grb.gov.tw/search/planDetail?id=542052&docId=99568
Appears in Collections:	Research Plans

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