標題: | A 1-V, 16.9 ppm/degrees C, 250 nA Switched-Capacitor CMOS Voltage Reference |
作者: | Hsieh, Chun-Yu Huang, Hong-Wei Chen, Ke-Horng 電控工程研究所 Institute of Electrical and Control Engineering |
關鍵字: | CMOS voltage reference;nanocurrent;switched-capacitor |
公開日期: | 1-四月-2011 |
摘要: | An ultra low-power, precise voltage reference using a switched-capacitor technique in 0.35-mu m CMOS is presented in this paper. The temperature dependence of the carrier mobility and channel length modulation effect can be effectively minimized by using 3.3 and 5V N-type transistors to operate in the saturation and subthreshold regions, respectively. In place of resistors, a precise reference voltage with flexible trimming capability is achieved by using capacitors. When the supply voltage is 1 V and the temperature is 80 degrees C, the supply current is 250 nA. The line sensitivity is 0.76%/V; the PSRR is -41 dB at 100 Hz and -17 dB at 10 MHz. Moreover, the occupied die area is 0.049 mm(2). |
URI: | http://dx.doi.org/10.1109/TVLSI.2009.2038061 http://hdl.handle.net/11536/9089 |
ISSN: | 1063-8210 |
DOI: | 10.1109/TVLSI.2009.2038061 |
期刊: | IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS |
Volume: | 19 |
Issue: | 4 |
起始頁: | 659 |
結束頁: | 667 |
顯示於類別: | 期刊論文 |