矽鍺非應力層在高速電晶體及射頻元件的應用

標題:	矽鍺非應力層在高速電晶體及射頻元件的應用 Application of Strain-Relaxed SiGe in High Speed Transistor and RF Devices
作者:	荊鳳德 CHIN ALBERT 國立交通大學電子工程學系
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-100
URI:	http://hdl.handle.net/11536/91252 https://www.grb.gov.tw/search/planDetail?id=583875&docId=109703
Appears in Collections:	Research Plans

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.