高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(I)

標題:	高介電氧化層奈米CMOS元件可靠性關鍵問題及界面量測技術研究(I) Key Reliability Issues and Interface Characterization Techniques for High-K Nano-CMOS Devices (I)
作者:	莊紹勳 Chung Steve S 國立交通大學電子工程學系
公開日期:	2003
官方說明文件#:	NSC92-2215-E009-059
URI:	http://hdl.handle.net/11536/91858 https://www.grb.gov.tw/search/planDetail?id=873536&docId=167355
Appears in Collections:	Research Plans

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