Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance

標題:	Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
作者:	Cheng, Chun-Hu Yeh, Fon-Shan Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	15-二月-2011
摘要:	Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.
URI:	http://dx.doi.org/10.1002/adma.201002946 http://hdl.handle.net/11536/9298
ISSN:	0935-9648
DOI:	10.1002/adma.201002946
期刊:	ADVANCED MATERIALS
Volume:	23
Issue:	7
起始頁:	902
結束頁:	+
顯示於類別：	期刊論文

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