MOS元件之閘極層介電材料之技術開發與清潔溶液對複晶矽薄膜經化學機械研磨之研發

標題:	MOS元件之閘極層介電材料之技術開發與清潔溶液對複晶矽薄膜經化學機械研磨之研發 Technology Development on Gate Dielectric for MOS Devices and Cleaning Solutions for Poly-Si Film after CMP
作者:	雷添福 LEI TAN-FU 國立交通大學電子工程研究所
關鍵字:	閘極介電材料;清潔溶液;多晶矽薄膜;化學機械拋光;金氧半導體元件;Gate dielectric material;Clean solution;Poly-silicon film;Chemical mechanical polishing (CMP);MOS device
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-070
URI:	http://hdl.handle.net/11536/93470 https://www.grb.gov.tw/search/planDetail?id=665711&docId=126376
Appears in Collections:	Research Plans

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