| 標題: | 隨機記憶體用超薄氧化鉭介電薄膜電容之研發(II) Ultra Thin Ta/sub 2/O/sub 5/ Film Capacitor for DRAM(II) |
| 作者: | 林鵬 LIN PANG 國立交通大學材料科學與工程學系 |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2218-E009-088 |
| URI: | http://hdl.handle.net/11536/93728 https://www.grb.gov.tw/search/planDetail?id=597424&docId=112583 |
| 顯示於類別： | 研究計畫 |
- 隨機記憶體用超薄氧化鉭介電薄膜電容之研發 / 林鵬;LIN PANG
- 以低壓化學氣相沉積氧化鉭和氧化鈦薄膜在動態隨機記憶體元件技術之研究 / 羅正忠
- Short-duration rapid-thermal-annealing processing of tantalum oxide thin films / Ezhilvalavan, S;Tseng, TY
- Preparation and properties of tantalum pentoxide (Ta2O5) thin films for ultra large scale integrated circuits (ULSIs) application - A review / Ezhilvalavan, S;Tseng, TY
- Low-Leakage-Current DRAM-Like Memory Using a One-Transistor Ferroelectric MOSFET With a Hf-Based Gate Dielectric / Cheng, Chun-Hu;Chin, Albert
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