利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性

標題:	利用電荷幫浦分佈法研究深次微米N型MOS元件電漿製程傷害之可靠性 Charge pumping Profiling Technique for Reliability Analysis of Plasma Induced Damage in Deep-submicron n-MOSFETs
作者:	莊紹勳 Chung Steve S 國立交通大學電子工程研究所
公開日期:	2000
官方說明文件#:	NSC89-2215-E009-107
URI:	http://hdl.handle.net/11536/93759 https://www.grb.gov.tw/search/planDetail?id=583902&docId=109710
Appears in Collections:	Research Plans

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