Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 邱碧秀 | en_US |
dc.contributor.author | CHIOU BI-SHIOU | en_US |
dc.date.accessioned | 2014-12-13T10:36:18Z | - |
dc.date.available | 2014-12-13T10:36:18Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.govdoc | NSC90-2216-E009-032 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/93855 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=673263&docId=128265 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 多層基板 | zh_TW |
dc.subject | 低介電材料 | zh_TW |
dc.subject | 界面可靠度 | zh_TW |
dc.subject | 高密度 | zh_TW |
dc.subject | 銅互接 | zh_TW |
dc.subject | Multilayer substrate | en_US |
dc.subject | Low dielectric material | en_US |
dc.subject | Interfacial reliability | en_US |
dc.subject | High density | en_US |
dc.subject | Copper interconnection | en_US |
dc.title | 高密度多層構裝基板與接合材料研究---子計畫II:銅接合-低介電材料介電層之界面可靠度提昇研究(III) | zh_TW |
dc.title | Reliability Enhancement for Copper Interconnect-Low K Dielectric Interface (III) | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 國立交通大學電子工程學系 | zh_TW |
Appears in Collections: | Research Plans |
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