標題: 高密度多層構裝基板與接合材料研究---子計畫II:銅接合-低介電材料介電層之界面可靠度提昇研究(III)
Reliability Enhancement for Copper Interconnect-Low K Dielectric Interface (III)
作者: 邱碧秀
CHIOU BI-SHIOU
國立交通大學電子工程學系
關鍵字: 多層基板;低介電材料;界面可靠度;高密度;銅互接;Multilayer substrate;Low dielectric material;Interfacial reliability;High density;Copper interconnection
公開日期: 2001
官方說明文件#: NSC90-2216-E009-032
URI: http://hdl.handle.net/11536/93855
https://www.grb.gov.tw/search/planDetail?id=673263&docId=128265
Appears in Collections:Research Plans


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