低溫成長絕緣矽氧化膜設備之研製(I)

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	葉清發	en_US
dc.date.accessioned	2014-12-13T10:36:47Z	-
dc.date.available	2014-12-13T10:36:47Z	-
dc.date.issued	1999	en_US
dc.identifier.govdoc	NSC88-2215-E009-036	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/94167	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=444368&docId=80481	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	室溫沈積法	zh_TW
dc.subject	選擇性成長	zh_TW
dc.subject	氟	zh_TW
dc.subject	半導體	zh_TW
dc.subject	氧化膜	zh_TW
dc.subject	Room temperature deposition	en_US
dc.subject	LPD	en_US
dc.subject	Fluorine	en_US
dc.subject	Semiconductor	en_US
dc.subject	Oxide	en_US
dc.title	低溫成長絕緣矽氧化膜設備之研製(I)	zh_TW
dc.title	Development of Equipment for Room-Temperature Deposited Silicon Oxide (I)	en_US
dc.type	Plan	en_US
dc.contributor.department	交通大學電子工程系	zh_TW
顯示於類別：	研究計畫