標題: New test structure to monitor contact-to-poly leakage in sub-90 nm CMOS technologies
作者: King, Ming-Chu
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: contact;gate;leakage current;test structure
公開日期: 1-May-2008
摘要: The high leakage or even direct short between contact and gate is a serious problem after the feature sizes are shrunk to 65-nm technology and beyond. However, there is no suitable test structure to effectively monitor the leakage current between them. We have designed a new test structure which can eliminate the drawbacks of existing test structures and effectively monitor the leakage current between contact and gate electrode in state-of-the-art CMOS process technology.
URI: http://dx.doi.org/10.1109/TSM.2008.2000267
http://hdl.handle.net/11536/9435
ISSN: 0894-6507
DOI: 10.1109/TSM.2008.2000267
期刊: IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
Volume: 21
Issue: 2
起始頁: 244
結束頁: 247
Appears in Collections:Articles


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