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標題: 深次微米CMOS元件之複晶矽介電層與閘極氧化層之技術開發
Technology Development on Polysilicon Dielectric Layers and Gate Oxides for Deep Submicron CMOS Devices
作者: 雷添福
LEI TAN-FU
交通大學電子工程系
關鍵字: 深次微米;複晶矽;介電層;閘極氧化層;互補式金氧半導體;Deep submicron;Polysilicon;Dielectric layer;Gate oxide;CMOS
公開日期: 1999
官方說明文件#: NSC88-2215-E009-045
URI: http://hdl.handle.net/11536/94461
https://www.grb.gov.tw/search/planDetail?id=444190&docId=80439
Appears in Collections:Research Plans


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