矽與矽鍺材料及元件之發展---子計畫一：矽與矽鍺材料及物理特性研究

Title:	矽與矽鍺材料及元件之發展---子計畫一：矽與矽鍺材料及物理特性研究 The Study of Si/SiGe Material and Physical Characterization
Authors:	施敏交通大學電子工程系
Keywords:	矽;鍺;化學氣相沈積法;化學分子束磊晶;超晶格;量子霍耳效應;Silicon;Germanium;Chemical vapor deposition (CVD);Chemical molecular epitaxy (CME);Superlattice;Quantum hall effect
Issue Date:	1997
Gov't Doc #:	NSC86-2215-E009-020
URI:	http://hdl.handle.net/11536/95567 https://www.grb.gov.tw/search/planDetail?id=293153&docId=53655
Appears in Collections:	Research Plans