標題: 金氧半電晶體內界面缺陷所產生汲極漏電流的物理機制與實驗量測
Mechanisms and Characterization of Interface Trap Induced Drain Leakage Current in Si n-MOSFET's
作者: 汪大暉
WANG TAHUI
國立交通大學電子工程學系
關鍵字: 界面缺陷;汲極漏電流;物理機制;模擬;金氧半場效電晶體;Interface trap;Drain leakage current;Physical mechanism;Simulation;MOSFET
公開日期: 1996
官方說明文件#: NSC85-2215-E009-050
URI: http://hdl.handle.net/11536/95790
https://www.grb.gov.tw/search/planDetail?id=230199&docId=41827
Appears in Collections:Research Plans