完整后设资料纪录
DC 栏位 | 值 | 语言 |
---|---|---|
dc.contributor.author | 曾俊元 | en_US |
dc.contributor.author | TSEUNG-YUENTSENG | en_US |
dc.date.accessioned | 2014-12-13T10:38:52Z | - |
dc.date.available | 2014-12-13T10:38:52Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.govdoc | NSC85-2216-E009-011 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/95816 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=207091&docId=36607 | en_US |
dc.description.sponsorship | 行政院国家科学委员会 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 积层式氧化锌变阻器 | zh_TW |
dc.subject | 衰化 | zh_TW |
dc.subject | 深陷能阶 | zh_TW |
dc.subject | Multilayer chip ZnO varistor | en_US |
dc.subject | Degradation | en_US |
dc.subject | Deep level transient spectroscopy | en_US |
dc.title | 积层式氧化锌变阻器衰化现象之研究 | zh_TW |
dc.title | The Study of Degradation Phenomena of Multilayer ZnO Varistor | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 国立交通大学电子工程学系 | zh_TW |
显示于类别: | Research Plans |