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dc.contributor.author曾俊元en_US
dc.contributor.authorTSEUNG-YUENTSENGen_US
dc.date.accessioned2014-12-13T10:38:52Z-
dc.date.available2014-12-13T10:38:52Z-
dc.date.issued1996en_US
dc.identifier.govdocNSC85-2216-E009-011zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/95816-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=207091&docId=36607en_US
dc.description.sponsorship行政院国家科学委员会zh_TW
dc.language.isozh_TWen_US
dc.subject积层式氧化锌变阻器zh_TW
dc.subject衰化zh_TW
dc.subject深陷能阶zh_TW
dc.subjectMultilayer chip ZnO varistoren_US
dc.subjectDegradationen_US
dc.subjectDeep level transient spectroscopyen_US
dc.title积层式氧化锌变阻器衰化现象之研究zh_TW
dc.titleThe Study of Degradation Phenomena of Multilayer ZnO Varistoren_US
dc.typePlanen_US
dc.contributor.department国立交通大学电子工程学系zh_TW
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