積層式氧化鋅變阻器衰化現象之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	曾俊元	en_US
dc.contributor.author	TSEUNG-YUENTSENG	en_US
dc.date.accessioned	2014-12-13T10:38:52Z	-
dc.date.available	2014-12-13T10:38:52Z	-
dc.date.issued	1996	en_US
dc.identifier.govdoc	NSC85-2216-E009-011	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/95816	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=207091&docId=36607	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.subject	積層式氧化鋅變阻器	zh_TW
dc.subject	衰化	zh_TW
dc.subject	深陷能階	zh_TW
dc.subject	Multilayer chip ZnO varistor	en_US
dc.subject	Degradation	en_US
dc.subject	Deep level transient spectroscopy	en_US
dc.title	積層式氧化鋅變阻器衰化現象之研究	zh_TW
dc.title	The Study of Degradation Phenomena of Multilayer ZnO Varistor	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
顯示於類別：	研究計畫