矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III)

標題:	矽鍺源/汲極金氧半電晶體及電感在射頻應用之研究(III) A Study on SiGe Source/Drain MOSFET and Inductor for RF Applications (III)
作者:	張俊彥 CHANG CHUN-YEN 國立交通大學電子工程研究所
關鍵字:	矽鍺源;汲極;金氧半導體場效電晶體;射頻應用;SiGe source;Drain;MOSFET;RF application
公開日期:	2001
官方說明文件#:	NSC90-2215-E009-112
URI:	http://hdl.handle.net/11536/96520 https://www.grb.gov.tw/search/planDetail?id=665829&docId=126406
Appears in Collections:	Research Plans

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