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dc.contributor.author黃調元en_US
dc.contributor.authorTIAO-YUANHUANGen_US
dc.date.accessioned2014-12-13T10:39:38Z-
dc.date.available2014-12-13T10:39:38Z-
dc.date.issued2001en_US
dc.identifier.govdocNSC90-2215-E009-079zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/96696-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=665743&docId=126385en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject蕭特基能障zh_TW
dc.subject理論分析zh_TW
dc.subject金氧半導體元件zh_TW
dc.subjectSchotty barrieren_US
dc.subjectTheoretical analysisen_US
dc.subjectMOS deviceen_US
dc.title蕭特基能障金氧半電晶體元件研製與理論分析---總計畫zh_TW
dc.titleFabrication, Characterization, and Theoretical Analysis on Schottky Barrier MOS Devicesen_US
dc.typePlanen_US
dc.contributor.department國立交通大學電子工程學系zh_TW
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