| 标题: | High-Performance MIM Capacitors Using a High-kappa TiZrO Dielectric |
| 作者: | Cheng, C. H. Pan, H. C. Lin, S. H. Hsu, H. H. Hsiao, C. N. Chou, C. P. Yeh, F. S. Chin, Albert 机械工程学系 电子工程学系及电子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics |
| 公开日期: | 2008 |
| 摘要: | We have fabricated high-kappa Ni/TiZrO/TaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3x10(-8) A/cm(2) at -1 V was obtained for a 18 fF/mu m(2) capacitance density. For a 5.5 fF/mu m(2) capacitance density device, a small voltage coefficient of capacitance alpha of 105 ppm/V(2) and temperature coefficient of capacitance of 156 ppm/degrees C were measured. (c) 2008 The Electrochemical Society. [DOI: 10.1149/1.2993977] All rights reserved. |
| URI: | http://hdl.handle.net/11536/9893 http://dx.doi.org/10.1149/1.2993977 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.2993977 |
| 期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
| Volume: | 155 |
| Issue: | 12 |
| 起始页: | G295 |
| 结束页: | G298 |
| 显示于类别： | Articles |
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- High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 Insulators / Lin, S. H.;Chiang, K. C.;Chin, Albert;Yeh, F. S.
- High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO(2)/ZrO(2) Insulators / Lin, S. H.;Chiang, K. C.;Chin, Albert;Yeh, F. S.
- High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface Treatment / Cheng, C. H.;Hsu, H. H.;Hsieh, I. J.;Deng, C. K.;Chin, Albert
- Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics / Yang, MY;Huang, CH;Chin, A;Zhu, CX;Cho, BJ
- Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitors / Cheng, C. H.;Hsu, H. H.;Chen, P. C.;Liou, B. H.;Chin, Albert
- Improved high-temperature leakage in high-density MIM capacitors by using a TiLaO dielectric and an Ir electrode / Cheng, C. H.;Pan, H. C.;Yang, H. J.;Hsiao, C. N.;Chou, C. P.
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