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Showing results 21 to 35 of 35 < previous 
Issue DateTitleAuthor(s)
2005Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function differenceYu, DS; Chin, A; Wu, CH; Li, MF; Zhu, C; Wang, SJ; Yoo, WJ; Hung, BF; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2004Light emission near 1.3 mu m using ITO-Al2O3-Si0.3Ge0.7-Si tunnel diodesLin, CY; Chin, A; Hou, YT; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, SY; Yu, HY; Chen, JD; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Microwave coplanar filters on Si substratesChan, KT; Chin, A; Kuo, JT; Chang, CY; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2004N-type Schottky barrier source/drain MOSFET using ytterbium silicideZhu, SY; Chen, JD; Li, MF; Lee, SJ; Singh, J; Zhu, CX; Du, AY; Tung, CH; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2005A novel program-erasable high-(K) A1N-Si MIS capacitorLai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, SJ; Cho, BJ; Li, MF; Yu, XF; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulationChin, A; Chan, KT; Huang, CH; Chen, C; Liang, V; Chen, JK; Chien, SC; Sung, SW; Duh, DS; Lin, WJ; Zhu, CX; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, BJ; Chan, DSH; Yu, MB; Rustagi, SC; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, SY; Yu, HY; Whang, SJ; Chen, JH; Shen, C; Zhu, CX; Lee, SJ; Li, MF; Chan, DSH; Yoo, WJ; Du, AY; Tung, CH; Singh, J; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, HL; Chin, A; Hung, BF; Lai, JM; Lee, CF; Li, MF; Samudra, GS; Zhu, C; Xia, ZL; Liu, XY; Kang, JF; 電機學院; College of Electrical and Computer Engineering
1-Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N; Zhang, QC; Zhu, CX; Chan, DSH; Du, AY; Balasubramanian, N; Li, MF; Chin, A; Sin, JKO; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2005Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devicesYu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
2004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, CH; Lee, CF; Chin, A; Zhu, C; Li, MF; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2003Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 21 to 35 of 35 < previous