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22-十二月-2004Cu-penetration induced breakdown mechanism for a-SiCNChen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-八月-2005Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectricYang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
17-十一月-2003Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsLiu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Dimensional effects on the drain current of n- and p-channel polycrystalline silicon thin film transistorsShih, PS; Zan, HW; Chang, TC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2000Dimensional effects on the reliability of polycrystalline silicon thin-film transistorsZan, HW; Shih, PS; Chang, TC; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technologyChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1996Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor depositionChang, TC; Yeh, WK; Chang, CY; Jung, TG; Tsai, WC; Huang, GW; Mei, YJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-四月-2004A distributed charge storage with GeO2 nanodotsChang, TC; Yan, ST; Hsu, CH; Tang, MT; Lee, JF; Tai, YH; Liu, PT; Sze, SM; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-十一月-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1999Effectively blocking copper diffusion at low-k hydrogen silsesquioxane/copper interfaceLiu, PT; Chang, TC; Yang, YL; Cheng, YF; Shih, FY; Lee, JK; Tsai, E; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applicationsHu, JC; Chang, TC; Wu, CW; Chen, LJ; Hsiung, CS; Hsieh, WY; Lur, W; Yew, TR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of channel width and NH3 plasma passivation on electrical characteristics of polysilicon thin-film transistors by pattern-dependent metal-induced lateral crystallizationWu, YC; Chang, TC; Chou, CW; Wu, YC; Liu, PT; Tu, CH; Huang, WJ; Lou, JC; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-十月-2005Effects of channel width on electrical characteristics of polysilicon TFTs with multiple nanowire channelsWu, YC; Chang, TC; Liu, PT; Chen, CS; Tu, CH; Zan, HW; Tai, YH; Chang, CY; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
31-十月-1997Effects of corrosion environments on the surface finishing of copper chemical mechanical polishingWang, MT; Tsai, MS; Liu, C; Tseng, WT; Chang, TC; Chen, LJ; Cheng, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1999Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxaneChang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1999Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processesChang, TC; Liu, PT; Shih, FY; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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