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公開日期標題作者
1-十月-1992DECODING METRICS FOR SLOW FREQUENCY-HOPPED DPSK SYSTEMSSU, YT; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
15-九月-1996Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicLee, WI; Young, RL; Chen, WK; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr
22-七月-1996Defects and degradation in ZnO varistorLee, WI; Young, RL; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr
1-七月-2007A delta-doped InGaP/InGaAs pHEMT with different doping profiles for device-linearity improvementLin, Yueh-Chin; Chang, Edward Yi; Yamaguchi, Hiroshi; Wu, Wei-Cheng; Chang, Chun-Yen; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-二月-2005Detection of subwavelength slit-width variation with measurements in the far field by use of an embedded-aperture interferometer configurationChu, SC; Chern, JL; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-三月-2005Development of highly stable organic electroluminescent devices with a doped co-host emitter systemLiu, TH; Iou, CY; Chen, CH; 光電工程學系; 友訊交大聯合研發中心; Department of Photonics; D Link NCTU Joint Res Ctr
1-七月-2006Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTsLin, YC; Chang, EY; Yamaguchi, H; Hirayama, Y; Chang, XY; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-十月-2006Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)Lin, Y. C.; Chang, Edward Yi; Yamaguchi, H.; Hirayama, Y.; Chang, X. Y.; Chang, C. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
15-十二月-2011DNA double-strand breaks induced along the trajectory of particlesCho, I. C.; Niu, H.; Chen, C. H.; Yu, Y. C.; Hsu, C. H.; 奈米科技中心; 友訊交大聯合研發中心; Center for Nanoscience and Technology; D Link NCTU Joint Res Ctr
1-八月-2002A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFETLi, YM; Chao, TS; Sze, SM; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-八月-1999A dopant-related defect in Te-doped AlInPWu, YR; Sung, WJ; Wen, TC; Lee, SC; Lee, WI; 電子物理學系; 友訊交大聯合研發中心; Department of Electrophysics; D Link NCTU Joint Res Ctr
4-四月-2003Doped blue emitters of 9,10-di(2-naphthyl)anthracene in organic electroluminescent devicesLiu, TH; Shen, WJ; Yen, CK; Iou, CY; Chen, HH; Banumathy, B; Chen, CH; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
22-十二月-2003Doped red organic electroluminescent devices based on a cohost emitter systemLiu, TH; Iou, CY; Chen, CH; 應用化學系; 光電工程學系; 友訊交大聯合研發中心; Department of Applied Chemistry; Department of Photonics; D Link NCTU Joint Res Ctr
1-三月-2009The effect of AlN buffer growth parameters on the defect structure of GaN grown on sapphire by plasma-assisted molecular beam epitaxyWong, Yuen-Yee; Chang, Edward Yi; Yang, Tsung-Hsi; Chang, Jet-Rung; Chen, Yi-Cheng; Ku, Jui-Tai; Lee, Ching-Ting; Chang, Chun-Wei; 材料科學與工程學系; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-十二月-2003Effect of Shape and Size on Electron Transition Energies for Nanoscale InAs/GaAs Quantum RingsLi, Yiming; Lu, Hsiao-Mei; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
1-四月-2002Effect of shape and size on electron transition energies of InAs semiconductor quantum dotsLi, YM; Voskoboynikov, O; Lee, CP; Sze, SM; Tretyak, O; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
1-五月-2006Effective electrostatic discharge protection circuit design using novel fully silicided N-MOSFETs in sub-100-nm device era.Lee, JW; Li, YM; 電信工程研究所; 友訊交大聯合研發中心; Institute of Communications Engineering; D Link NCTU Joint Res Ctr
1-九月-2012Effective refractive index of the photonic crystal deduced from the oscillation model of the membranePei, Ting-Hang; Huang, Yang-Tung; 電子工程學系及電子研究所; 友訊交大聯合研發中心; Department of Electronics Engineering and Institute of Electronics; D Link NCTU Joint Res Ctr
18-九月-1995EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXYLEE, WI; HUANG, TC; GUO, JD; FENG, MS; 材料科學與工程學系; 電子物理學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; Department of Electrophysics; D Link NCTU Joint Res Ctr
1-十一月-2004Effects of substrate treatment on the electroluminescence performance of flexible OLEDsLee, SN; Hsu, SF; Hwang, SW; Chen, CH; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
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