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公開日期標題作者
15-十月-1993INVESTIGATION OF INDIUM DOPING IN INGAAS GAAS ALGAAS GRADED-INDEX SEPARATED CONFINEMENT HETEROSTRUCTURE LASERSTSANG, JS; LEE, CP; LIU, DC; CHEN, HR; TSAI, KL; TSAI, CM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995KINETICS OF COMPOSITIONAL DISORDERING OF ALGAAS/GAAS QUANTUM-WELLS INDUCED BY LAW-TEMPERATURE GROWN GAASTSANG, JS; LEE, CP; LEE, SH; TSAI, KL; CHEN, HR; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-1993LIGHT-INDUCED SIDEGATING EFFECT IN GAAS-MESFETSCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-1991MOLYBDENUM SILICIDE SCHOTTKY CONTACTS TO GAASCHUANG, HF; LEE, CP; WU, SC; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1993NOVEL ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FABRICATED BY 2-STAGE MOLECULAR-BEAM EPITAXYCHEN, HR; CHANG, CY; TSAI, KL; TSANG, JS; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-十二月-1993NOVEL FABRICATION TECHNIQUE TOWARDS QUANTUM DOTSLIU, DC; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1992A NOVEL TECHNIQUE FOR LOW-THRESHOLD AND HIGH-POWER INGAAS/GAAS STRAINED-LAYER 0.98-MU-M BURIED HETEROSTRUCTURE LASER FABRICATIONLIOU, DC; CHIANG, WH; LEE, CP; CHANG, KH; LIU, DG; WU, JS; TU, YK; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-八月-1991NUMERICAL-ANALYSIS OF THE FREQUENCY-DEPENDENT OUTPUT CONDUCTANCE OF GAAS-MESFETSLO, SH; LEE, CP; 物理研究所; 電控工程研究所; Institute of Physics; Institute of Electrical and Control Engineering
1-二月-1992NUMERICAL-ANALYSIS OF THE LOOPING EFFECT IN GAAS-MESFETSLO, SH; LEE, CP; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-七月-1992NUMERICAL-ANALYSIS OF THE PHOTOEFFECTS IN GAAS-MESFETSLO, SH; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETSCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1992NUMERICAL-SIMULATION OF THE HYSTERESIS IN THE SIDEGATING EFFECT IN GAAS-MESFETS - THE EFFECT OF SCHOTTKY CONTACTSCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1993NUMERICAL-SIMULATION OF THE SUPPRESSION OF SIDEGATING EFFECTS IN GAAS-MESFETS BY ION-BOMBARDMENTCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1994NUMERICAL-SIMULATION OF THE TEMPERATURE-DEPENDENCE OF THE SIDEGATING EFFECT IN GAAS-MESFETSCHANG, SJ; LEE, CP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-1989ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, CY; LEE, CP; WANG, YH; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering
23-十一月-1989PERIODIC FLUX INTERRUPTION AND SUSTAINED TWO-DIMENSIONAL GROWTH FOR MOLECULAR-BEAM EPITAXYLEE, CP; CHANG, KH; LIU, DG; WU, JS; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
15-八月-1992PHOTOREFLECTION STUDY ON THE SURFACE ELECTRIC-FIELD OF DELTA-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYLIU, DG; CHANG, KH; LEE, CP; HSU, TM; TIEN, YC; 電控工程研究所; Institute of Electrical and Control Engineering
1-十一月-1991PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAASCHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA; 電控工程研究所; Institute of Electrical and Control Engineering
1-七月-1991QUANTUM EFFECT IN THE ACCUMULATION LAYER ON FIELD-INDUCED PHOTOLUMINESCENCE OF DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; CHANG, KH; LEE, CP; CHANG, CY; LIU, DG; LIOU, DC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1990REPETITION OF NEGATIVE DIFFERENTIAL RESISTANCE IN VERTICALLY INTEGRATED DOUBLE-BARRIER RESONANT TUNNELING STRUCTURESWU, JS; LEE, CP; CHANG, CY; CHANG, KH; LIU, DG; LIOU, DC; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering