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顯示 41 到 60 筆資料，總共 74 筆 < 上一頁   下一頁 >
公開日期標題作者
1-九月-2006Physics and characterization of various hot-carrier degradation modes in LDMOS by using a three-region charge-pumping techniqueCheng, Chih-Chang; Lin, J. F.; Wang, Tahui; Hsieh, T. H.; Tzeng, J. T.; Jong, Y. C.; Liou, R. S.; Pan, Samuel C.; Hsu, S. L.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
八月-2016Poly-Silicon Trap Position and Pass Voltage Effects on RTN Amplitude in a Vertical NAND Flash Cell StringChou, Y. L.; Wang, Tahui; Lin, Mercator; Chang, Y. W.; Liu, Lenvis; Huang, S. W.; Tsai, W. J.; Lu, T. C.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2016Polycrystalline-Silicon Channel Trap Induced Transient Read Instability in a 3D NAND Flash Cell StringTsai, Wen-Jer; Lin, W. L.; Cheng, C. C.; Ku, S. H.; Chou, Y. L.; Liu, Lenvis; Hwang, S. W.; Lu, T. C.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash MemoryChiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2009Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellMa, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2012Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap DensityChen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Ho, Chia-Hua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-2016SET/RESET Cycling-Induced Trap Creation and SET-Disturb Failure Time Degradation in a Resistive-Switching MemoryChung, Yueh-Ting; Su, Po-Cheng; Lin, Wen-Jie; Chen, Min-Cheng; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Silicide Barrier Engineering Induced Random Telegraph Noise in 1Xnm CMOS ContactsChen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Huang, Chien-Chao; Ho, ChiaHua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009SONOS快閃記憶體中寫入電荷和元件結構對於隨機電報雜訊的影響林東陽; Lin, Steven; 汪大暉; Wang, Tahui; 電子研究所
1-三月-2013Statistical Characterization and Modeling of the Temporal Evolutions of Delta V-t Distribution in NBTI Recovery in Nanometer MOSFETsChiu, Jung-Piao; Liu, Yu-Heng; Hsieh, Hung-Da; Li, Chi-Wei; Chen, Min-Cheng; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-十月-2009Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistorsTang, Chun-Jung; Wang, Tahui; Chang, Chih-Sheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015TMD FinFET with 4 nm Thin Body and Back Gate Control for Future Low Power TechnologyChen, Min-Cheng; Li, Kai-Shin; Li, Lain-Jong; Lu, Ang-Yu; Li, Ming-Yang; Chang, Yung-Huang; Lin, Chang-Hsien; Chen, Yi-Ju; Hou, Yun-Fang; Chen, Chun-Chi; Wu, Bo-Wei; Wu, Cheng-San; Yang, Ivy; Lee, Yao-Jen; Shieh, Jia-Min; Yeh, Wen-Kuan; Shih, Jyun-Hong; Su, Po-Cheng; Sachid, Angada B.; Wang, Tahui; Yang, Fu-Liang; Hu, Chenming; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2010Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash MemoryChou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2012V-t Retention Distribution Tail in a Multitime-Program MLC SONOS Memory Due to a Random-Program-Charge-Induced Current-Path Percolation EffectChung, Yueh-Ting; Huang, Tzu-I; Li, Chi-Wei; Chou, You-Liang; Chiu, Jung-Piao; Wang, Tahui; Lee, M. Y.; Chen, Kuang-Chao; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2011Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016三維NAND快閃記憶體隨機電報雜訊之特性探討周佑亮; 汪大暉; Chou, You-Liang; Wang, Tahui; 電子工程學系 電子研究所
2015不同介電質的平面式及閘極環繞式氮化矽快閃記憶體之寫入/抹除/保存模擬蔡德宏; Tsai, Te-Hung; 汪大暉; Wang, Tahui; 電子工程學系 電子研究所
2009先進互補式金氧半電晶體及氮化矽快閃式記憶元件之可靠度分析和蒙地卡羅模擬唐俊榮; Tang, Chun-Jung; 汪大暉; Wang, Tahui; 電子研究所
2004對於利用氮化矽局部電荷儲存之快閃記憶元件可靠度問題的探討蔡文哲; Tsai, Wen-Jer; 汪大暉; Wang, Tahui; 電子研究所
顯示 41 到 60 筆資料，總共 74 筆 < 上一頁   下一頁 >